 Physics of Semiconductor Devices p-n junction (depletion Christiana Honsberg Derivation of the ideal diode equation for solar cells General Procedure using the depletion approximation: Divide the device into regions with an electric field and without an electric field.

## MCQ3-ED-PN junction Diode gatestudy.com

THE DEVICES University of California Berkeley. The Ideal Diode Equation: Diodes should be familiar to us by now. We use them when we need current to flow in only one direction. The question is, just how much current is there?, M.J. Gilbert ECE 340 - Lecture 27 10/29/12 Zener Breakdown Last time we talked about Consider the heavily doped p-n junction shown to the left and then apply a reverse bias to the junction. Reverse bias brings the conduction band very close to the valence band. This brings many occupied states on the p-side into energetic alignment with vacant states on the n-side. Electrons tunnel from.

The Diode Equation The reason for calling the proportionality constant Isat will become obvious when we consider reverse bias. Let us now make Va negative instead of positive. On the role of the p-n junction page, you learned that this barrier decreases by the amount of the applied bias. For all these reasons, the minority carrier density increases exponentially with applied bias, and so does the recombination rate, and so does the current through the diode.

8/22/2005 The Junction Diode Forward Bias Equation.doc 2/6 Jim Stiles The Univ. of Kansas Dept. of EECS Now, say a voltage v 1 across some junction diode results in a Physics of Semiconductor Devices p-n junction (depletion width) Problem A silicon p-n diode has a doping of N D = 81015 1 cm3 and N A = 210 16 1 cm3. What are the depletion

The pn Junction: The Shockley Model (В© S. O. Kasap, 1990 - 2001) An e-Booklet 3 in this way from the neural regions. Stated differently, there is a reverse current due to the diffusion of ties and device equations of the diode is appropriate. Rather than being comprehensive, chapter3.fm Page 44 Monday, September 6, 1999 1:50 PM . Section 3.2 The Diode 45 we choose to focus on those aspects that prove to be influential in the design of digital MOS circuits, this is the operation in reverse-biased mode.1 3.2.1 A First Glance at the Diode вЂ” The Depletion Region The pn-junction

Any variation of the charge within a p-n diode with an applied voltage variation yields a capacitance, which must be added to the circuit model of a p-n diode. This capacitance related to the depletion layer charge in a p-n diode is called the junction capacitance. across a p-n junction caused by вЂ“ the diffusion of electrons from the n-side of the junction into the p-side and вЂ“ the diffusion of holes from the p-side of the junction into the n-side Built-in Voltage kT N D N A f ln 2 q ni ..Reminder вЂў Drift currents only flow when there is an electric field present. вЂў Diffusion currents only flow when there is a concentration difference for either

8/22/2005 PN Junction Diode Equation.doc 1/2 Jim Stiles The Univ. of Kansas Dept. of EECS The Junction Diode Equation The relationship between the current through a junction diode The pn Junction: The Shockley Model (В© S. O. Kasap, 1990 - 2001) An e-Booklet 3 in this way from the neural regions. Stated differently, there is a reverse current due to the diffusion of

M.J. Gilbert ECE 340 - Lecture 27 10/29/12 Zener Breakdown Last time we talked about Consider the heavily doped p-n junction shown to the left and then apply a reverse bias to the junction. Reverse bias brings the conduction band very close to the valence band. This brings many occupied states on the p-side into energetic alignment with vacant states on the n-side. Electrons tunnel from Note that diode equation is 11. In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at (a) the edge of the depletion region on the p-side (b)the edge of the depletion region on the n-side (c) the p+n junction (d) the centre of the depletion region on the n-side [GATE 2007: 1 Mark] Soln. Given, The junction is p+n type i.e. p region is highly doped and n

A pn junction with open terminals (excluding minority carriers) F. Najmabadi, ECE65, Winter 2012 High concentration of h on the p side Holes diffuse towards the junction High concentration of e on the n side Electrons diffuse towards the junction n side is positively charged because it has lost electrons.has lost holes. p side is negatively A potential is formed which inhibits further PN junction diode, zener diode, transistor etc are fabricated from it. Many of the compounds apart from the elemental semiconductors also behave as

PDF This paper presents a numerical solution, using MATLAB, of the electrostatic potential in a pn junction, which obeys Poisson's equation. This numerical method is based on the Newton-Raphson Diode current equation expresses the relationship between the current flowing through the diode as a function of the voltage applied across it. Mathematically it is given as Where, I is the current flowing through the diode I 0 is the dark saturation current, q is the charge on the electron, V is the voltage applied across the diode, О· is the

December 2012 1 An Electronic Measurement of the BoltzmannвЂ™s Constant Using I-V Characteristics of a Silicon 2N3904 Diode Shawn Kann Department of Physics and Astronomy, San Francisco State University, San Francisco, pn-diode - Download as PDF File (.pdf), Text File (.txt) or view presentation slides online. pn diode description They are also called p-n diodes in analogy with vacuum diodes. The p-n junction is a versatile element, which can be used as a rectifier, as an isolation structure and as вЂ¦

8/22/2005 PN Junction Diode Equation.doc 1/2 Jim Stiles The Univ. of Kansas Dept. of EECS The Junction Diode Equation The relationship between the current through a junction diode PN junction diode. Initially we used the simplest form of the ideal diode equation given by (1.1). Initially we used the simplest form of the ideal diode equation given by (1.1). I

The Junction Diode Forward Bias Equation KU ITTC. M.J. Gilbert ECE 340 - Lecture 27 10/29/12 Zener Breakdown Last time we talked about Consider the heavily doped p-n junction shown to the left and then apply a reverse bias to the junction. Reverse bias brings the conduction band very close to the valence band. This brings many occupied states on the p-side into energetic alignment with vacant states on the n-side. Electrons tunnel from, 8/22/2005 The Junction Diode Forward Bias Equation.doc 2/6 Jim Stiles The Univ. of Kansas Dept. of EECS Now, say a voltage v 1 across some junction diode results in a.

### 2.11 The Shockley equation for a diode PV Lighthouse Diode equations PвЂ“N Junction Diode Scribd. across a p-n junction caused by вЂ“ the diffusion of electrons from the n-side of the junction into the p-side and вЂ“ the diffusion of holes from the p-side of the junction into the n-side Built-in Voltage kT N D N A f ln 2 q ni ..Reminder вЂў Drift currents only flow when there is an electric field present. вЂў Diffusion currents only flow when there is a concentration difference for either, PN junction diode. Initially we used the simplest form of the ideal diode equation given by (1.1). Initially we used the simplest form of the ideal diode equation given by (1.1). I.

Newton-Raphson Solution of Poisson's Equation in a Pn Diode. On the role of the p-n junction page, you learned that this barrier decreases by the amount of the applied bias. For all these reasons, the minority carrier density increases exponentially with applied bias, and so does the recombination rate, and so does the current through the diode., M.J. Gilbert ECE 340 - Lecture 27 10/29/12 Zener Breakdown Last time we talked about Consider the heavily doped p-n junction shown to the left and then apply a reverse bias to the junction. Reverse bias brings the conduction band very close to the valence band. This brings many occupied states on the p-side into energetic alignment with vacant states on the n-side. Electrons tunnel from.

### ECE 340 Lecture 27 Junction Capacitance PN Junction Diodes The Ideal Diode Equation. The standard equation for current through a diode is: I = I S * (exp (V/(n*k*T/q)) вЂ“1) Eq. 1 Where: I is the current through the diode I S is the reverse saturation current V is the voltage across the diode (can be positive or negative) n is a junction constant (typically around 2 for diodes, 1 for transistors) k is BoltzmannвЂ™s constant, 1.38E-23 Joules/Kelvin T is temperature in Kelvins q P-N Junction Diodes Quantitative Analysis (Math, math and more math) Georgia Tech ECE 4833 forward bias which in turn tries to drive those collected carriers back across the junction (diode in the model) they were just collected by. Electrical Model of a Solar Cell вЂўSome detailed models may add an additional diode. In this case: вЂўI o1 is a perfect diode with ideality factor, n = 1 and. Since the p-n junction demonstrates such a unipolar (rectifying) response to the applied voltage it is called a p-n diode and is denoted in circuit diagrams as a following symbol: The current voltage (IV) characteristic for the diode is rectifying and is very different from that PN junction diode, zener diode, transistor etc are fabricated from it. Many of the compounds apart from the elemental semiconductors also behave as

a) "Long" diode case Equations [4.1.13] and [4.1.14] can be solved using the carrier concentration at the edge of the depletion region as one boundary condition and the requirement to have a finite Note that diode equation is 11. In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at (a) the edge of the depletion region on the p-side (b)the edge of the depletion region on the n-side (c) the p+n junction (d) the centre of the depletion region on the n-side [GATE 2007: 1 Mark] Soln. Given, The junction is p+n type i.e. p region is highly doped and n

Diode I-V (Shockley) Equation: I D = I S(eVD/О·О·О·VT вЂ“ 1) вЂў As described in the last slide, I D is the current through the diode, I S is the saturation current and V D is the applied biasing voltage. The Shockley Equation 3.8 Physics of the Junction Diode The Unbiased pn Junction Figure 3.42 If a pn junction could be formed by joining a p-type crystal to an n-type . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 A . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 = d A. вЂ¦

8/22/2005 PN Junction Diode Equation.doc 1/2 Jim Stiles The Univ. of Kansas Dept. of EECS The Junction Diode Equation The relationship between the current through a junction diode 6 Introduction to Electronic Devices, Fall 2006, Dr. D. Knipp Diodes 3.2 Pn-junctions at zero bias 3.2.1 Semiconductor in Thermal equilibrium In order to understand the operating principle of a pn-junction вЂ¦

8/22/2005 PN Junction Diode Equation.doc 1/2 Jim Stiles The Univ. of Kansas Dept. of EECS The Junction Diode Equation The relationship between the current through a junction diode across a p-n junction caused by вЂ“ the diffusion of electrons from the n-side of the junction into the p-side and вЂ“ the diffusion of holes from the p-side of the junction into the n-side Built-in Voltage kT N D N A f ln 2 q ni ..Reminder вЂў Drift currents only flow when there is an electric field present. вЂў Diffusion currents only flow when there is a concentration difference for either

The standard equation for current through a diode is: I = I S * (exp (V/(n*k*T/q)) вЂ“1) Eq. 1 Where: I is the current through the diode I S is the reverse saturation current V is the voltage across the diode (can be positive or negative) n is a junction constant (typically around 2 for diodes, 1 for transistors) k is BoltzmannвЂ™s constant, 1.38E-23 Joules/Kelvin T is temperature in Kelvins q 4 Lecture 7: P-N Junction Diode 7 Diode Equation where I S = reverse saturation current (A) v D = voltage applied to diode (V) q = electronic charge (1.60 x 10-19 C)

The Shockley Equation 3.8 Physics of the Junction Diode The Unbiased pn Junction Figure 3.42 If a pn junction could be formed by joining a p-type crystal to an n-type . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 A . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 = d A. вЂ¦ The standard equation for current through a diode is: I = I S * (exp (V/(n*k*T/q)) вЂ“1) Eq. 1 Where: I is the current through the diode I S is the reverse saturation current V is the voltage across the diode (can be positive or negative) n is a junction constant (typically around 2 for diodes, 1 for transistors) k is BoltzmannвЂ™s constant, 1.38E-23 Joules/Kelvin T is temperature in Kelvins q

The standard equation for current through a diode is: I = I S * (exp (V/(n*k*T/q)) вЂ“1) Eq. 1 Where: I is the current through the diode I S is the reverse saturation current V is the voltage across the diode (can be positive or negative) n is a junction constant (typically around 2 for diodes, 1 for transistors) k is BoltzmannвЂ™s constant, 1.38E-23 Joules/Kelvin T is temperature in Kelvins q The Shockley Equation 3.8 Physics of the Junction Diode The Unbiased pn Junction Figure 3.42 If a pn junction could be formed by joining a p-type crystal to an n-type . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 A . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 = d A. вЂ¦

Since the p-n junction demonstrates such a unipolar (rectifying) response to the applied voltage it is called a p-n diode and is denoted in circuit diagrams as a following symbol: The current voltage (IV) characteristic for the diode is rectifying and is very different from that PDF This paper presents a numerical solution, using MATLAB, of the electrostatic potential in a pn junction, which obeys Poisson's equation. This numerical method is based on the Newton-Raphson

On the role of the p-n junction page, you learned that this barrier decreases by the amount of the applied bias. For all these reasons, the minority carrier density increases exponentially with applied bias, and so does the recombination rate, and so does the current through the diode. The Ideal Diode Equation: Diodes should be familiar to us by now. We use them when we need current to flow in only one direction. The question is, just how much current is there?

Christiana Honsberg Derivation of the ideal diode equation for solar cells General Procedure using the depletion approximation: Divide the device into regions with an electric field and without an electric field. current iОЅ, the ideal diode D and a shunt resistance Rp, all in parallel, together with a series resistance rs. For open circuit (Iext = 0) the voltage across the cell is nearly equal to the voltage across the diode. From the usual ideal diode equation, we can thus write

## Semiconductor Devices Lecture 5 pn-Junction Diode p-njunctions UMass Amherst. 22/04/2009В В· This is the standard way of expressing the diode equation. However, if we multiply the above expression by the cross-section area, we get the current I. However, if we multiply the above expression by the cross-section area, we get the current I., Since the p-n junction demonstrates such a unipolar (rectifying) response to the applied voltage it is called a p-n diode and is denoted in circuit diagrams as a following symbol: The current voltage (IV) characteristic for the diode is rectifying and is very different from that.

### 4. The p-n junction University of Colorado Boulder

Class 04 Device Physics I College of Engineering. Forward biased PN junction diode When the positive terminal of the battery is connected to P-side and negative terminal to the N-side, so that the potential difference acts in opposite direction to the barrier potential, then the PN junction diode is said to be forward biased., P N Junction Theory and diodes (Part I) вЂ“ GATE Problems. 1. In a junction diode (a) the depletion capacitance increases with increase in the reverse bias.

PDF This paper presents a numerical solution, using MATLAB, of the electrostatic potential in a pn junction, which obeys Poisson's equation. This numerical method is based on the Newton-Raphson Question 12 The relationship between voltage and current for a PN junction is described by this equation, sometimes referred to as the вЂќdiode equation,вЂќ or вЂќShockleyвЂ™s diode equationвЂ¦

Understanding of the operation of biased p-n junction rectifier diodes 2. Understanding of the operation of the Zener diodes Materials necessary for this Experiment 1. Standard testing stations 2. One rectifier diode (1N4002) The Ideal Diode Equation: Diodes should be familiar to us by now. We use them when we need current to flow in only one direction. The question is, just how much current is there?

Physics of Semiconductor Devices p-n junction (depletion width) Problem A silicon p-n diode has a doping of N D = 81015 1 cm3 and N A = 210 16 1 cm3. What are the depletion PN Homojunction вЂў Non linear device вЂў rectifier devices (composants redresseur) вЂў 2 devices reach the same results: вЂў PN Junction(this chapter)

The Diode Equation The reason for calling the proportionality constant Isat will become obvious when we consider reverse bias. Let us now make Va negative instead of positive. The Shockley Equation 3.8 Physics of the Junction Diode The Unbiased pn Junction Figure 3.42 If a pn junction could be formed by joining a p-type crystal to an n-type . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 A . 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 = d A. вЂ¦

Note that the equation for IB looks like that of a PNвЂђjunction diode, except that the preвЂђexponential factor contains only one (small) term, associated with diffusion of minority carriers across the quasiвЂђneutral emitter across a p-n junction caused by вЂ“ the diffusion of electrons from the n-side of the junction into the p-side and вЂ“ the diffusion of holes from the p-side of the junction into the n-side Built-in Voltage kT N D N A f ln 2 q ni ..Reminder вЂў Drift currents only flow when there is an electric field present. вЂў Diffusion currents only flow when there is a concentration difference for either

across a p-n junction caused by вЂ“ the diffusion of electrons from the n-side of the junction into the p-side and вЂ“ the diffusion of holes from the p-side of the junction into the n-side Built-in Voltage kT N D N A f ln 2 q ni ..Reminder вЂў Drift currents only flow when there is an electric field present. вЂў Diffusion currents only flow when there is a concentration difference for either Physics of Semiconductor Devices p-n junction (depletion width) Problem A silicon p-n diode has a doping of N D = 81015 1 cm3 and N A = 210 16 1 cm3. What are the depletion

a) "Long" diode case Equations [4.1.13] and [4.1.14] can be solved using the carrier concentration at the edge of the depletion region as one boundary condition and the requirement to have a finite P N Junction Theory and diodes (Part I) вЂ“ GATE Problems. 1. In a junction diode (a) the depletion capacitance increases with increase in the reverse bias

Note that the equation for IB looks like that of a PNвЂђjunction diode, except that the preвЂђexponential factor contains only one (small) term, associated with diffusion of minority carriers across the quasiвЂђneutral emitter current iОЅ, the ideal diode D and a shunt resistance Rp, all in parallel, together with a series resistance rs. For open circuit (Iext = 0) the voltage across the cell is nearly equal to the voltage across the diode. From the usual ideal diode equation, we can thus write

current iОЅ, the ideal diode D and a shunt resistance Rp, all in parallel, together with a series resistance rs. For open circuit (Iext = 0) the voltage across the cell is nearly equal to the voltage across the diode. From the usual ideal diode equation, we can thus write ELEC\$3908,\$Physical\$Electronics:\$Review\$of\$Diodes\$ 13 Diode - Structure and Symbol вЂў Diode or pn-junction is composed of two semiconducting materials, one p-type

Physics of Semiconductor Devices p-n junction (depletion width) Problem A silicon p-n diode has a doping of N D = 81015 1 cm3 and N A = 210 16 1 cm3. What are the depletion 4 Lecture 7: P-N Junction Diode 7 Diode Equation where I S = reverse saturation current (A) v D = voltage applied to diode (V) q = electronic charge (1.60 x 10-19 C)

### derivation of ideal diode equatio PVEducation Physics of Semiconductor Devices p-n junction (depletion. Christiana Honsberg Derivation of the ideal diode equation for solar cells General Procedure using the depletion approximation: Divide the device into regions with an electric field and without an electric field., 6 Introduction to Electronic Devices, Fall 2006, Dr. D. Knipp Diodes 3.2 Pn-junctions at zero bias 3.2.1 Semiconductor in Thermal equilibrium In order to understand the operating principle of a pn-junction вЂ¦. ### ECE 340 Lecture 27 Junction Capacitance The Practical Diode. Note that the equation for IB looks like that of a PNвЂђjunction diode, except that the preвЂђexponential factor contains only one (small) term, associated with diffusion of minority carriers across the quasiвЂђneutral emitter Forward biased PN junction diode When the positive terminal of the battery is connected to P-side and negative terminal to the N-side, so that the potential difference acts in opposite direction to the barrier potential, then the PN junction diode is said to be forward biased.. Current-Voltage Characteristic, 2 order effect The diode equation is modified to take care of the effect of recombination. An ideality factor n The standard equation for current through a diode is: I = I S * (exp (V/(n*k*T/q)) вЂ“1) Eq. 1 Where: I is the current through the diode I S is the reverse saturation current V is the voltage across the diode (can be positive or negative) n is a junction constant (typically around 2 for diodes, 1 for transistors) k is BoltzmannвЂ™s constant, 1.38E-23 Joules/Kelvin T is temperature in Kelvins q

December 2012 1 An Electronic Measurement of the BoltzmannвЂ™s Constant Using I-V Characteristics of a Silicon 2N3904 Diode Shawn Kann Department of Physics and Astronomy, San Francisco State University, San Francisco, 6 Introduction to Electronic Devices, Fall 2006, Dr. D. Knipp Diodes 3.2 Pn-junctions at zero bias 3.2.1 Semiconductor in Thermal equilibrium In order to understand the operating principle of a pn-junction вЂ¦

Any variation of the charge within a p-n diode with an applied voltage variation yields a capacitance, which must be added to the circuit model of a p-n diode. This capacitance related to the depletion layer charge in a p-n diode is called the junction capacitance. ELEC\$3908,\$Physical\$Electronics:\$Review\$of\$Diodes\$ 13 Diode - Structure and Symbol вЂў Diode or pn-junction is composed of two semiconducting materials, one p-type

ties and device equations of the diode is appropriate. Rather than being comprehensive, chapter3.fm Page 44 Monday, September 6, 1999 1:50 PM . Section 3.2 The Diode 45 we choose to focus on those aspects that prove to be influential in the design of digital MOS circuits, this is the operation in reverse-biased mode.1 3.2.1 A First Glance at the Diode вЂ” The Depletion Region The pn-junction Current-Voltage Characteristic, 2 order effect The diode equation is modified to take care of the effect of recombination. An ideality factor n

PN Homojunction вЂў Non linear device вЂў rectifier devices (composants redresseur) вЂў 2 devices reach the same results: вЂў PN Junction(this chapter) Current-Voltage Characteristic, 2 order effect The diode equation is modified to take care of the effect of recombination. An ideality factor n

Since the p-n junction demonstrates such a unipolar (rectifying) response to the applied voltage it is called a p-n diode and is denoted in circuit diagrams as a following symbol: The current voltage (IV) characteristic for the diode is rectifying and is very different from that Note that the equation for IB looks like that of a PNвЂђjunction diode, except that the preвЂђexponential factor contains only one (small) term, associated with diffusion of minority carriers across the quasiвЂђneutral emitter

PN Homojunction вЂў Non linear device вЂў rectifier devices (composants redresseur) вЂў 2 devices reach the same results: вЂў PN Junction(this chapter) Christiana Honsberg Derivation of the ideal diode equation for solar cells General Procedure using the depletion approximation: Divide the device into regions with an electric field and without an electric field.

p-njunctions вЂў p-n junctions behave like diodes, rectifying the current п¬‚ow. LetвЂ™s now get back to the equilibrium condition and start to analyze the junction quantitatively. вЂў Equilibrium. LetвЂ™s consider the band-bending and carrier densities at equilibrium. вЂ“ Poissonequation. First,the Poisson equation describing the band bending in the depletion region is: d 2 П† (x) dx 2 Diode current equation expresses the relationship between the current flowing through the diode as a function of the voltage applied across it. Mathematically it is given as Where, I is the current flowing through the diode I 0 is the dark saturation current, q is the charge on the electron, V is the voltage applied across the diode, О· is the

Current-Voltage Characteristic, 2 order effect The diode equation is modified to take care of the effect of recombination. An ideality factor n The diode current equation presented in Equation 3.26 defines an exponential relationship between the diode current (the dependent variable) and the diode voltage (the independent variable) and is вЂ¦

6 Introduction to Electronic Devices, Fall 2006, Dr. D. Knipp Diodes 3.2 Pn-junctions at zero bias 3.2.1 Semiconductor in Thermal equilibrium In order to understand the operating principle of a pn-junction вЂ¦ P-N Junction Diodes Quantitative Analysis (Math, math and more math) Georgia Tech ECE 4833 forward bias which in turn tries to drive those collected carriers back across the junction (diode in the model) they were just collected by. Electrical Model of a Solar Cell вЂўSome detailed models may add an additional diode. In this case: вЂўI o1 is a perfect diode with ideality factor, n = 1 and

The pn Junction: The Shockley Model (В© S. O. Kasap, 1990 - 2001) An e-Booklet 3 in this way from the neural regions. Stated differently, there is a reverse current due to the diffusion of The diode current equation presented in Equation 3.26 defines an exponential relationship between the diode current (the dependent variable) and the diode voltage (the independent variable) and is вЂ¦

A Joke The night Michael Jordan was inducted into the Hall of Fame, he ended his induction speech with these words: "One day you might look up and see me playing the game at 50. Michael jordan hall of fame speech pdf Whitney 17/02/2017 · Jordan’s Hall of Fame induction speech We’re all familiar with this phenomenal display of narcissism and axe grinding the likes of which we’ve never seen before at Springfield.